Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Author: Smirnov, A. B.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118306
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Residual stresses and piezoelectric properties of the HgCdTe –
 based compound heterostructures under the anisotropic
 deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ.

Narrow-gap mercury cadmium telluride thin films grown by MBE methods
 onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric
 heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were
 analyzed. It was determined that for [310] oriented MCT-based structures under the
 anisotropic restriction of the deformation the nonzero shear components of the strain
 tensor arise and stress induced piezoelectric polarization is generated. Existence of the
 built-in electric field in the strained MCT-based heterostructure results in the spatial
 separation of the nonequilibrium carriers and the possibility of the room temperature
 detection of the IR radiation is realized.