Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction
Narrow-gap mercury cadmium telluride thin films grown by MBE methods
 onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric
 heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were
 analyzed. It was determine...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118306 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Residual stresses and piezoelectric properties of the HgCdTe –
 based compound heterostructures under the anisotropic
 deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862699639360192512 |
|---|---|
| author | Smirnov, A. B. |
| author_facet | Smirnov, A. B. |
| citation_txt | Residual stresses and piezoelectric properties of the HgCdTe –
 based compound heterostructures under the anisotropic
 deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Narrow-gap mercury cadmium telluride thin films grown by MBE methods
onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric
heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were
analyzed. It was determined that for [310] oriented MCT-based structures under the
anisotropic restriction of the deformation the nonzero shear components of the strain
tensor arise and stress induced piezoelectric polarization is generated. Existence of the
built-in electric field in the strained MCT-based heterostructure results in the spatial
separation of the nonequilibrium carriers and the possibility of the room temperature
detection of the IR radiation is realized.
|
| first_indexed | 2025-12-07T16:36:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118306 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:36:24Z |
| publishDate | 2012 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Smirnov, A. B. 2017-05-29T16:41:56Z 2017-05-29T16:41:56Z 2012 Residual stresses and piezoelectric properties of the HgCdTe –
 based compound heterostructures under the anisotropic
 deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 72.40.+w, 77.65.Ly, 81.05.Dz https://nasplib.isofts.kiev.ua/handle/123456789/118306 Narrow-gap mercury cadmium telluride thin films grown by MBE methods
 onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric
 heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were
 analyzed. It was determined that for [310] oriented MCT-based structures under the
 anisotropic restriction of the deformation the nonzero shear components of the strain
 tensor arise and stress induced piezoelectric polarization is generated. Existence of the
 built-in electric field in the strained MCT-based heterostructure results in the spatial
 separation of the nonequilibrium carriers and the possibility of the room temperature
 detection of the IR radiation is realized. The authors would like to express their thanks Dr R Savkina all her critical help in the process writing. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction Article published earlier |
| spellingShingle | Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction Smirnov, A. B. |
| title | Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_full | Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_fullStr | Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_full_unstemmed | Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_short | Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction |
| title_sort | residual stresses and piezoelectric properties of the hgcdte – based compound heterostructures under the anisotropic deformation restriction |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118306 |
| work_keys_str_mv | AT smirnovab residualstressesandpiezoelectricpropertiesofthehgcdtebasedcompoundheterostructuresundertheanisotropicdeformationrestriction |