Reflection coefficient and optical conductivity of gallium nitride GaN
Here we report the reflection coefficient and optical conductivity of gallium
 nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV
 shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was
 observed that the reflect...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2012 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118322 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ. |