Reflection coefficient and optical conductivity of gallium nitride GaN

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2012
• Hauptverfasser: Akinlami, J.O., Olateju, I.O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118322
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ.

Here we report the reflection coefficient and optical conductivity of gallium
 nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV
 shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was
 observed that the reflection coefficient has its highest value 0.54 at the photon energy
 7.0 eV. Variation of the real part of optical conductivity with photon energy shows five
 distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the
 real part of optical conductivity has the maximum value 5.75·10¹⁵ for the photon energy
 7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions of
 deeper penetration of electromagnetic waves, and they also show high conductivity. The
 imaginary part of optical conductivity obtained for GaN in the photon energy range 2.0
 to 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It
 was observed that it has a minimum value of –6.46·10¹⁵ for the photon energy 8.0 eV and
 a maximum value at –1.2·10¹⁵. This implies that there is a reduction in conductivity of
 GaN, and likewise, reduction in the propagation of electromagnetic waves in this region