Reflection coefficient and optical conductivity of gallium nitride GaN

Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2012
Hauptverfasser: Akinlami, J.O., Olateju, I.O.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118322
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118322
record_format dspace
spelling Akinlami, J.O.
Olateju, I.O.
2017-05-29T18:01:49Z
2017-05-29T18:01:49Z
2012
Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ.
1560-8034
PACS 78.20.Ci, 78.20.-e, 78.40.-q
https://nasplib.isofts.kiev.ua/handle/123456789/118322
Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV. Variation of the real part of optical conductivity with photon energy shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the real part of optical conductivity has the maximum value 5.75·10¹⁵ for the photon energy 7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions of deeper penetration of electromagnetic waves, and they also show high conductivity. The imaginary part of optical conductivity obtained for GaN in the photon energy range 2.0 to 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that it has a minimum value of –6.46·10¹⁵ for the photon energy 8.0 eV and a maximum value at –1.2·10¹⁵. This implies that there is a reduction in conductivity of GaN, and likewise, reduction in the propagation of electromagnetic waves in this region
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Reflection coefficient and optical conductivity of gallium nitride GaN
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Reflection coefficient and optical conductivity of gallium nitride GaN
spellingShingle Reflection coefficient and optical conductivity of gallium nitride GaN
Akinlami, J.O.
Olateju, I.O.
title_short Reflection coefficient and optical conductivity of gallium nitride GaN
title_full Reflection coefficient and optical conductivity of gallium nitride GaN
title_fullStr Reflection coefficient and optical conductivity of gallium nitride GaN
title_full_unstemmed Reflection coefficient and optical conductivity of gallium nitride GaN
title_sort reflection coefficient and optical conductivity of gallium nitride gan
author Akinlami, J.O.
Olateju, I.O.
author_facet Akinlami, J.O.
Olateju, I.O.
publishDate 2012
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV. Variation of the real part of optical conductivity with photon energy shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the real part of optical conductivity has the maximum value 5.75·10¹⁵ for the photon energy 7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions of deeper penetration of electromagnetic waves, and they also show high conductivity. The imaginary part of optical conductivity obtained for GaN in the photon energy range 2.0 to 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that it has a minimum value of –6.46·10¹⁵ for the photon energy 8.0 eV and a maximum value at –1.2·10¹⁵. This implies that there is a reduction in conductivity of GaN, and likewise, reduction in the propagation of electromagnetic waves in this region
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118322
citation_txt Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ.
work_keys_str_mv AT akinlamijo reflectioncoefficientandopticalconductivityofgalliumnitridegan
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first_indexed 2025-12-07T16:41:40Z
last_indexed 2025-12-07T16:41:40Z
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