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Reflection coefficient and optical conductivity of gallium nitride GaN

Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflect...

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Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2012
Main Authors:	Akinlami, J.O., Olateju, I.O.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/118322
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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