Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2012
• Main Authors: Rubish, V.M., Kozusenok, O.V., Shtets, P.P., Marjan, V.M., Gera, E.V., Tarnaj, A.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118326
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ.

The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystal...