Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2012
• Автори: Rubish, V.M., Kozusenok, O.V., Shtets, P.P., Marjan, V.M., Gera, E.V., Tarnaj, A.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118326
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ.

The results of isothermal and nonisothermal crystallization investigations of
 the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films
 crystallization is accompanied by a sharp decrease in transmission. The phase structure
 arising in the matrix of films during crystallization corresponds to the structure of
 crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the
 amorphous matrix is discussed.