Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method
The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystal...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2012 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118326 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118326 |
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Rubish, V.M. Kozusenok, O.V. Shtets, P.P. Marjan, V.M. Gera, E.V. Tarnaj, A.A. 2017-05-29T18:06:30Z 2017-05-29T18:06:30Z 2012 Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 78.20.-e https://nasplib.isofts.kiev.ua/handle/123456789/118326 The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystallization corresponds to the structure of crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the amorphous matrix is discussed. This work was in part supported by Science and Technology Center in Ukraine (project No.5208). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method |
| spellingShingle |
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method Rubish, V.M. Kozusenok, O.V. Shtets, P.P. Marjan, V.M. Gera, E.V. Tarnaj, A.A. |
| title_short |
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method |
| title_full |
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method |
| title_fullStr |
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method |
| title_full_unstemmed |
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method |
| title_sort |
crystallization study of (as₂s₃)₁₀₀-x(sbsi)x amorphous films by the optical method |
| author |
Rubish, V.M. Kozusenok, O.V. Shtets, P.P. Marjan, V.M. Gera, E.V. Tarnaj, A.A. |
| author_facet |
Rubish, V.M. Kozusenok, O.V. Shtets, P.P. Marjan, V.M. Gera, E.V. Tarnaj, A.A. |
| publishDate |
2012 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The results of isothermal and nonisothermal crystallization investigations of
the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films
crystallization is accompanied by a sharp decrease in transmission. The phase structure
arising in the matrix of films during crystallization corresponds to the structure of
crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the
amorphous matrix is discussed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118326 |
| citation_txt |
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ. |
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