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Photoelectrical properties of nanoporous silicon

The optimal composition of etchant solution and etching time for chemical treatment to obtain nanoporous Si have been determined. Influence of nanocrystal dimensions on the electrophysical and photoelectrical properties of heterojunctions has been studied. The current-volt...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2012
Main Authors:	Luchenko, A.I., Svezhentsova, K.V., Melnichenko, M.M.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/118327
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Photoelectrical properties of nanoporous silicon / A.I. Luchenko, K.V. Svezhentsova, M.M. Melnichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 298-301. — Бібліогр.: 9 назв. — англ.

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