Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields
The electron distribution function and transport characteristics of hot electrons
 in GaN semiconductor are calculated by the Monte Carlo method. We studied the
 electron transport at temperatures of 10, 77, and 300 K under low and moderate electric
 fields. We found that, at...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2007 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118329 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields / G.I. Syngaivska, V.V.Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 54-59. — Бібліогр.: 16 назв. — англ. |