Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields
The electron distribution function and transport characteristics of hot electrons in GaN semiconductor are calculated by the Monte Carlo method. We studied the electron transport at temperatures of 10, 77, and 300 K under low and moderate electric fields. We found that, at low temperatures and lo...
Збережено в:
| Дата: | 2007 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118329 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields / G.I. Syngaivska, V.V.Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 54-59. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The electron distribution function and transport characteristics of hot electrons
in GaN semiconductor are calculated by the Monte Carlo method. We studied the
electron transport at temperatures of 10, 77, and 300 K under low and moderate electric
fields. We found that, at low temperatures and low electric fields (a few hundreds of
V/cm), the second “ohmic” region is to be observed on the I-V characteristic. In this case,
the mean energy is very slowly dependent on the field. The streaming effect can occur in
bulk GaN with low electron concentration (<10¹⁶ cm⁻³) at low temperatures and electric
fields of a few kV/cm. |
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