Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2007
• Hauptverfasser: Syngaivska, G.I., Korotyeyev, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118329
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields / G.I. Syngaivska, V.V.Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 54-59. — Бібліогр.: 16 назв. — англ.

The electron distribution function and transport characteristics of hot electrons
 in GaN semiconductor are calculated by the Monte Carlo method. We studied the
 electron transport at temperatures of 10, 77, and 300 K under low and moderate electric
 fields. We found that, at low temperatures and low electric fields (a few hundreds of
 V/cm), the second “ohmic” region is to be observed on the I-V characteristic. In this case,
 the mean energy is very slowly dependent on the field. The streaming effect can occur in
 bulk GaN with low electron concentration (<10¹⁶ cm⁻³) at low temperatures and electric
 fields of a few kV/cm.