Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields
The electron distribution function and transport characteristics of hot electrons
 in GaN semiconductor are calculated by the Monte Carlo method. We studied the
 electron transport at temperatures of 10, 77, and 300 K under low and moderate electric
 fields. We found that, at...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2007 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118329 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields / G.I. Syngaivska, V.V.Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 54-59. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862533363772948480 |
|---|---|
| author | Syngaivska, G.I. Korotyeyev, V.V. |
| author_facet | Syngaivska, G.I. Korotyeyev, V.V. |
| citation_txt | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields / G.I. Syngaivska, V.V.Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 54-59. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The electron distribution function and transport characteristics of hot electrons
in GaN semiconductor are calculated by the Monte Carlo method. We studied the
electron transport at temperatures of 10, 77, and 300 K under low and moderate electric
fields. We found that, at low temperatures and low electric fields (a few hundreds of
V/cm), the second “ohmic” region is to be observed on the I-V characteristic. In this case,
the mean energy is very slowly dependent on the field. The streaming effect can occur in
bulk GaN with low electron concentration (<10¹⁶ cm⁻³) at low temperatures and electric
fields of a few kV/cm.
|
| first_indexed | 2025-11-24T06:14:41Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118329 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T06:14:41Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Syngaivska, G.I. Korotyeyev, V.V. 2017-05-29T18:58:39Z 2017-05-29T18:58:39Z 2007 Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields / G.I. Syngaivska, V.V.Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 54-59. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 02.70.Uu, 72.10.-d https://nasplib.isofts.kiev.ua/handle/123456789/118329 The electron distribution function and transport characteristics of hot electrons
 in GaN semiconductor are calculated by the Monte Carlo method. We studied the
 electron transport at temperatures of 10, 77, and 300 K under low and moderate electric
 fields. We found that, at low temperatures and low electric fields (a few hundreds of
 V/cm), the second “ohmic” region is to be observed on the I-V characteristic. In this case,
 the mean energy is very slowly dependent on the field. The streaming effect can occur in
 bulk GaN with low electron concentration (<10¹⁶ cm⁻³) at low temperatures and electric
 fields of a few kV/cm. The authors would like to express their gratitude to
 Professor V.A. Kochelap for his valuable discussions on
 various aspects of this work. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields Article published earlier |
| spellingShingle | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields Syngaivska, G.I. Korotyeyev, V.V. |
| title | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields |
| title_full | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields |
| title_fullStr | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields |
| title_full_unstemmed | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields |
| title_short | Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields |
| title_sort | monte carlo simulation of hot electron effects in compensated gan semiconductor at moderate electricfields |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118329 |
| work_keys_str_mv | AT syngaivskagi montecarlosimulationofhotelectroneffectsincompensatedgansemiconductoratmoderateelectricfields AT korotyeyevvv montecarlosimulationofhotelectroneffectsincompensatedgansemiconductoratmoderateelectricfields |