Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering
The process of thermal decomposition of SiOx layers prepared by magnetron sputtering is studied with the use of photoluminescence and Auger and SIMS spectroscopies. From these measurements, we obtained the distributions of the emission properties and the chemical composition over the depth. The e...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2007 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118344 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering / L. Khomenkova, N. Korsunska, M. Sheinkman, T. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 21-25. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118344 |
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Khomenkova, L. Korsunska, N. Sheinkman, M. Stara, T. 2017-05-29T19:38:28Z 2017-05-29T19:38:28Z 2007 Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering / L. Khomenkova, N. Korsunska, M. Sheinkman, T. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 21-25. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 78.55.-m, 79.60.-i, 82.80.-d, 82.80.Ms https://nasplib.isofts.kiev.ua/handle/123456789/118344 The process of thermal decomposition of SiOx layers prepared by magnetron sputtering is studied with the use of photoluminescence and Auger and SIMS spectroscopies. From these measurements, we obtained the distributions of the emission properties and the chemical composition over the depth. The effect of the redistribution of silicon and oxygen over the depth is found after the high-temperature annealing which results in the formation of a Si nanocrystal. These redistributions result in the appearance of a Si-depleted region near the layer-substrate interface. The formation of a depletion layer is dependent on the excess of Si. A decrease of the silicon content over the depth of annealed layers is accompanied by a decrease of the Si nanocrystal size, as it is evidenced by the blue shift of the photoluminescence maximum. The mechanism of decomposition of SiOx and the possible reasons for the appearance of a Si-depleted region are discussed. This work was supported by the National Academy of Sciences of Ukraine. The authors thank C. Sada and E. Trave (University of Padua, Italy) for the help in the SIMS measurements and Y. Goldstein, J. Jedrzejewski, and E. Savir (Hebrew University, Israel) for providing the samples. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering |
| spellingShingle |
Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering Khomenkova, L. Korsunska, N. Sheinkman, M. Stara, T. |
| title_short |
Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering |
| title_full |
Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering |
| title_fullStr |
Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering |
| title_full_unstemmed |
Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering |
| title_sort |
chemical composition and light emission properties of si-rich-siox layers prepared by magnetron sputtering |
| author |
Khomenkova, L. Korsunska, N. Sheinkman, M. Stara, T. |
| author_facet |
Khomenkova, L. Korsunska, N. Sheinkman, M. Stara, T. |
| publishDate |
2007 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The process of thermal decomposition of SiOx layers prepared by magnetron
sputtering is studied with the use of photoluminescence and Auger and SIMS
spectroscopies. From these measurements, we obtained the distributions of the emission
properties and the chemical composition over the depth. The effect of the redistribution
of silicon and oxygen over the depth is found after the high-temperature annealing which
results in the formation of a Si nanocrystal. These redistributions result in the appearance
of a Si-depleted region near the layer-substrate interface. The formation of a depletion
layer is dependent on the excess of Si. A decrease of the silicon content over the depth of
annealed layers is accompanied by a decrease of the Si nanocrystal size, as it is
evidenced by the blue shift of the photoluminescence maximum. The mechanism of
decomposition of SiOx and the possible reasons for the appearance of a Si-depleted
region are discussed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118344 |
| citation_txt |
Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering / L. Khomenkova, N. Korsunska, M. Sheinkman, T. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 21-25. — Бібліогр.: 16 назв. — англ. |
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| first_indexed |
2025-12-07T16:42:22Z |
| last_indexed |
2025-12-07T16:42:22Z |
| _version_ |
1850868490266738688 |