Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>
The influence of isovalent impurity of Si on the kinetics of electron processes in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at Т = 77.4 K), the presence of isovalent impurity significantly reduces the mobility...
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| Date: | 2014 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118355 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 25-28. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The influence of isovalent impurity of Si on the kinetics of electron processes
in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of
predominant impurity scattering (at Т = 77.4 K), the presence of isovalent impurity
significantly reduces the mobility of charge carriers and changes the sign of inequality
ne₃₀₀k / ne₇₇.₄k > 1 characteristic of n-Ge <Sb> single crystals to the opposite one. It has
found that in n-Ge <Sb> samples irradiated by y-rays (⁶⁰Co) with the dose 1.23*10⁸ R, the
charge carrier mobility has low radiation stability and decreases with increasing the
magnetic field, while remaining practically unchanged in the region of the intermediate
Н values. |
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