Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>

• Datum: 2014
• 1. Verfasser: Gaidar, G.P.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118355
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 25-28. — Бібліогр.: 14 назв. — англ.

The influence of isovalent impurity of Si on the kinetics of electron processes in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at Т = 77.4 K), the presence of isovalent impurity significantly reduces the mobility of charge carriers and changes the sign of inequality ne₃₀₀k / ne₇₇.₄k > 1 characteristic of n-Ge <Sb> single crystals to the opposite one. It has found that in n-Ge <Sb> samples irradiated by y-rays (⁶⁰Co) with the dose 1.23*10⁸ R, the charge carrier mobility has low radiation stability and decreases with increasing the magnetic field, while remaining practically unchanged in the region of the intermediate Н values.