Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe
Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons and interfaces were taken into account. It was found tha...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2014 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118360 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe / E.O. Melezhik, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 85-96. — Бібліогр.: 45 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118360 |
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Melezhik, Ye.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. 2017-05-30T05:45:11Z 2017-05-30T05:45:11Z 2014 Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe / E.O. Melezhik, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 85-96. — Бібліогр.: 45 назв. — англ. 1560-8034 PACS 73.21.Fg, 84.40.-x https://nasplib.isofts.kiev.ua/handle/123456789/118360 Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons and interfaces were taken into account. It was found that for undoped and lightly doped QWs (concentration of background n-type charged impurities in the well is 10¹⁴ – 10¹⁶ cm-³ or less), for x close to the band inversion value 0.16, the electron mobility grows considerably when the QW width decreases. This mobility is higher for samples with smaller concentrations of charged impurities. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe |
| spellingShingle |
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe Melezhik, Ye.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. |
| title_short |
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe |
| title_full |
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe |
| title_fullStr |
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe |
| title_full_unstemmed |
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe |
| title_sort |
electron relaxation and mobility in the inverted band quantum well cdte/hg₁₋xcdxte/cdte |
| author |
Melezhik, Ye.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. |
| author_facet |
Melezhik, Ye.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this
structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons
and interfaces were taken into account. It was found that for undoped and lightly doped
QWs (concentration of background n-type charged impurities in the well is 10¹⁴ – 10¹⁶ cm-³
or less), for x close to the band inversion value 0.16, the electron mobility grows
considerably when the QW width decreases. This mobility is higher for samples with
smaller concentrations of charged impurities.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118360 |
| fulltext |
|
| citation_txt |
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe / E.O. Melezhik, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 85-96. — Бібліогр.: 45 назв. — англ. |
| work_keys_str_mv |
AT melezhikyeo electronrelaxationandmobilityintheinvertedbandquantumwellcdtehg1xcdxtecdte AT gumenjuksichevskajv electronrelaxationandmobilityintheinvertedbandquantumwellcdtehg1xcdxtecdte AT sizovff electronrelaxationandmobilityintheinvertedbandquantumwellcdtehg1xcdxtecdte |
| first_indexed |
2025-11-24T09:08:39Z |
| last_indexed |
2025-11-24T09:08:39Z |
| _version_ |
1850844498562646016 |