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Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe

Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this
 structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons
 and interfaces were taken into account....

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2014
Main Authors: Melezhik, Ye.O., Gumenjuk-Sichevska, J.V., Sizov, F.F.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118360
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe / E.O. Melezhik, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 85-96. — Бібліогр.: 45 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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