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Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe

Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons and interfaces were taken into account. It was found tha...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2014
Main Authors: Melezhik, Ye.O., Gumenjuk-Sichevska, J.V., Sizov, F.F.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118360
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe / E.O. Melezhik, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 85-96. — Бібліогр.: 45 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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