Features of Auger-emission in channeling
Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy Auger-electrons in silicon, when changi...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118361 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118361 |
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dspace |
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Kossko, I.A. Denisov, A.Ye. 2017-05-30T05:45:39Z 2017-05-30T05:45:39Z 2014 Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ. 1560-8034 Features of Auger-emission in channeling https://nasplib.isofts.kiev.ua/handle/123456789/118361 Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy Auger-electrons in silicon, when changing the angle of acting initial radiation during sample rotation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Features of Auger-emission in channeling Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Features of Auger-emission in channeling |
| spellingShingle |
Features of Auger-emission in channeling Kossko, I.A. Denisov, A.Ye. |
| title_short |
Features of Auger-emission in channeling |
| title_full |
Features of Auger-emission in channeling |
| title_fullStr |
Features of Auger-emission in channeling |
| title_full_unstemmed |
Features of Auger-emission in channeling |
| title_sort |
features of auger-emission in channeling |
| author |
Kossko, I.A. Denisov, A.Ye. |
| author_facet |
Kossko, I.A. Denisov, A.Ye. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Shown in this paper is the influence of channeling effect on formation of the
signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It
has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy
Auger-electrons in silicon, when changing the angle of acting initial radiation
during sample rotation.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118361 |
| citation_txt |
Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ. |
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AT kosskoia featuresofaugeremissioninchanneling AT denisovaye featuresofaugeremissioninchanneling |
| first_indexed |
2025-12-07T15:25:35Z |
| last_indexed |
2025-12-07T15:25:35Z |
| _version_ |
1850863660205867008 |