Features of Auger-emission in channeling
Shown in this paper is the influence of channeling effect on formation of the
 signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It
 has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy
 Auger-electrons...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118361 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862668425235529728 |
|---|---|
| author | Kossko, I.A. Denisov, A.Ye. |
| author_facet | Kossko, I.A. Denisov, A.Ye. |
| citation_txt | Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Shown in this paper is the influence of channeling effect on formation of the
signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It
has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy
Auger-electrons in silicon, when changing the angle of acting initial radiation
during sample rotation.
|
| first_indexed | 2025-12-07T15:25:35Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118361 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:25:35Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kossko, I.A. Denisov, A.Ye. 2017-05-30T05:45:39Z 2017-05-30T05:45:39Z 2014 Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ. 1560-8034 Features of Auger-emission in channeling https://nasplib.isofts.kiev.ua/handle/123456789/118361 Shown in this paper is the influence of channeling effect on formation of the
 signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It
 has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy
 Auger-electrons in silicon, when changing the angle of acting initial radiation
 during sample rotation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Features of Auger-emission in channeling Article published earlier |
| spellingShingle | Features of Auger-emission in channeling Kossko, I.A. Denisov, A.Ye. |
| title | Features of Auger-emission in channeling |
| title_full | Features of Auger-emission in channeling |
| title_fullStr | Features of Auger-emission in channeling |
| title_full_unstemmed | Features of Auger-emission in channeling |
| title_short | Features of Auger-emission in channeling |
| title_sort | features of auger-emission in channeling |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118361 |
| work_keys_str_mv | AT kosskoia featuresofaugeremissioninchanneling AT denisovaye featuresofaugeremissioninchanneling |