Features of Auger-emission in channeling

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Kossko, I.A., Denisov, A.Ye.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118361
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ.

Shown in this paper is the influence of channeling effect on formation of the
 signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It
 has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy
 Auger-electrons...