Nanostructures in lightly doped silicon carbide crystals with polytypic defects
In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown
 original defects are reported. Undoped SiC single crystals with the impurity
 concentration of ND – NA ~ (2…8)*10¹⁶ cm⁻³, NA ~ (2…8)*10¹⁷ cm⁻³, and ND – NA ~
 (1…5)*10¹⁷ cm⁻³, ND = 10¹⁸ cm⁻...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118364 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Nanostructures in lightly doped silicon carbide crystals
 with polytypic defects / S.I. Vlaskina, G.N. Mishinova, L.V. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 155-159. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862583487572213760 |
|---|---|
| author | Vlaskina, S.I. Mishinova, G.N. Vlaskin, L.V. Rodionov, V.E. Svechnikov, G.S. |
| author_facet | Vlaskina, S.I. Mishinova, G.N. Vlaskin, L.V. Rodionov, V.E. Svechnikov, G.S. |
| citation_txt | Nanostructures in lightly doped silicon carbide crystals
 with polytypic defects / S.I. Vlaskina, G.N. Mishinova, L.V. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 155-159. — Бібліогр.: 23 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown
original defects are reported. Undoped SiC single crystals with the impurity
concentration of ND – NA ~ (2…8)*10¹⁶ cm⁻³, NA ~ (2…8)*10¹⁷ cm⁻³, and ND – NA ~
(1…5)*10¹⁷ cm⁻³, ND = 10¹⁸ cm⁻³ were investigated. The analysis of absorption,
excitation and low temperature photoluminescence spectra suggests formation of a new
micro-phase during the growth process and appearance of the deep-level (DL) spectra.
The complex spectra of the crystals can be decomposed into the so-called DLi (i = 1, 2,
3, 4) spectra. The appearance of the DLi spectrum is associated with formation of new
nano-phases. Data of photoluminescence, excitation and absorption spectra show the
uniformity of different DLi spectra. Structurally, the general complexity of the DLi
spectra correlated with the degree of disorder of the crystal and was connected with onedimensional
disorder, the same as in the case of the stacking fault (SFi) spectra. The DLi
spectra differ from SFi spectra and have other principles of construction and behavior.
The DLi spectra are placed on a broad donor-acceptor pairs emission band in crystals
with higher concentrations of non-compensated impurities. The excitation spectra for the
DLi and SFi spectra coincide and indicate formation of nanostructures 14H₁<4334>,
10H₂<55>, 14H₂<77>, 8H<44>
|
| first_indexed | 2025-11-27T00:35:42Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118364 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T00:35:42Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlaskina, S.I. Mishinova, G.N. Vlaskin, L.V. Rodionov, V.E. Svechnikov, G.S. 2017-05-30T05:57:20Z 2017-05-30T05:57:20Z 2014 Nanostructures in lightly doped silicon carbide crystals
 with polytypic defects / S.I. Vlaskina, G.N. Mishinova, L.V. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 155-159. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS 64.70.K-, 78.60.Lc https://nasplib.isofts.kiev.ua/handle/123456789/118364 In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown
 original defects are reported. Undoped SiC single crystals with the impurity
 concentration of ND – NA ~ (2…8)*10¹⁶ cm⁻³, NA ~ (2…8)*10¹⁷ cm⁻³, and ND – NA ~
 (1…5)*10¹⁷ cm⁻³, ND = 10¹⁸ cm⁻³ were investigated. The analysis of absorption,
 excitation and low temperature photoluminescence spectra suggests formation of a new
 micro-phase during the growth process and appearance of the deep-level (DL) spectra.
 The complex spectra of the crystals can be decomposed into the so-called DLi (i = 1, 2,
 3, 4) spectra. The appearance of the DLi spectrum is associated with formation of new
 nano-phases. Data of photoluminescence, excitation and absorption spectra show the
 uniformity of different DLi spectra. Structurally, the general complexity of the DLi
 spectra correlated with the degree of disorder of the crystal and was connected with onedimensional
 disorder, the same as in the case of the stacking fault (SFi) spectra. The DLi
 spectra differ from SFi spectra and have other principles of construction and behavior.
 The DLi spectra are placed on a broad donor-acceptor pairs emission band in crystals
 with higher concentrations of non-compensated impurities. The excitation spectra for the
 DLi and SFi spectra coincide and indicate formation of nanostructures 14H₁<4334>,
 10H₂<55>, 14H₂<77>, 8H<44> en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Nanostructures in lightly doped silicon carbide crystals with polytypic defects Article published earlier |
| spellingShingle | Nanostructures in lightly doped silicon carbide crystals with polytypic defects Vlaskina, S.I. Mishinova, G.N. Vlaskin, L.V. Rodionov, V.E. Svechnikov, G.S. |
| title | Nanostructures in lightly doped silicon carbide crystals with polytypic defects |
| title_full | Nanostructures in lightly doped silicon carbide crystals with polytypic defects |
| title_fullStr | Nanostructures in lightly doped silicon carbide crystals with polytypic defects |
| title_full_unstemmed | Nanostructures in lightly doped silicon carbide crystals with polytypic defects |
| title_short | Nanostructures in lightly doped silicon carbide crystals with polytypic defects |
| title_sort | nanostructures in lightly doped silicon carbide crystals with polytypic defects |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118364 |
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