Silicon carbide LED von Vlaskina, S.I.

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Mechanism of 6H-3C transformation in SiC von Vlaskina, S.I.

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Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects von Vlaskina, S.I., Mishinova, G.N., Rodionov, V.E., Svechnikov, G.S.

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Nanocrystalline silicon carbide films for solar cells von Vlaskina, S.I., Mishinova, V.I., Rodionov, V.E., Svechnikov, G.S.

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Characterization of nano-bio silicon carbide von Vlaskina, S.I., Mishinova, G.N., Shaginyan, I.L., Smertenko, P.S., Svechnikov, G.S.

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8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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3C-6H transformation in heated cubic silicon carbide 3C-SiC von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Flexible electroluminescent panels von Vlaskin, V.I., Vlaskina, S.I., Koval, O.Yu., Rodionov, V.E., Svechnikov, G.S.

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Boron, aluminum, nitrogen, oxygen impurities in silicon carbide von Vlaskina, S.I., Vlaskin, V.I., Podlasov, S.A., Rodionov, V.E., Svechnikov, G.S.

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Nanostructures in lightly doped silicon carbide crystals with polytypic defects von Vlaskina, S.I., Mishinova, G.N., Vlaskin, L.V., Rodionov, V.E., Svechnikov, G.S.

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Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Nanograin boundaries and silicon carbide photoluminescence von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.

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Silicon carbide phase transition in as-grown 3C-6H polytypes junction von Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.

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Electrophysical сharacteristics of LEDs based on GaN epitaxial films von Oleksenko, P.Ph., Sukach, G.A., Smertenko, P.S., Vlaskina, S.I., Bogoslovskaya, A.B., Spichak, I.O., Shin, D.H.

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Silicon carbide defects and luminescence centers in current heated 6H-SiC von Lee, S.W., Vlaskina, S.I., Vlaskin, V.I., Zaharchenko, I.V., Gubanov, V.A., Mishinova, G.N., Svechnikov, G.S., Rodionov, V.E., Podlasov, S.A.

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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

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