Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms
Using approximation of dielectric continuum and the Green function method, studied in this work is the influence of electron-phonon interaction on position of the bottom of the ground energy band for electron in the quantum well of a finite depth. Considering the example of a plain nano-heterostr...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2014 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118365 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms / D.V. Kondryuk, V.M. Kramar, O.P. Kroitor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 160-164. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Using approximation of dielectric continuum and the Green function method,
studied in this work is the influence of electron-phonon interaction on position of the
bottom of the ground energy band for electron in the quantum well of a finite depth.
Considering the example of a plain nano-heterostructure with a quantum well based on
the double heterojunction AlxGa₁₋xAs/GaAs (nanofilm), the authors have calculated the
electron energy for a varied thickness of the film. It has been studied the influence of
barrier material composition as well as electron-phonon interaction on the electron
energy
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| ISSN: | 1560-8034 |