Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms
Using approximation of dielectric continuum and the Green function method,
 studied in this work is the influence of electron-phonon interaction on position of the
 bottom of the ground energy band for electron in the quantum well of a finite depth.
 Considering the example o...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118365 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms / D.V. Kondryuk, V.M. Kramar, O.P. Kroitor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 160-164. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862710941055975424 |
|---|---|
| author | Kondryuk, D.V. Kramar, V.M. Kroitor, O.P. |
| author_facet | Kondryuk, D.V. Kramar, V.M. Kroitor, O.P. |
| citation_txt | Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms / D.V. Kondryuk, V.M. Kramar, O.P. Kroitor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 160-164. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Using approximation of dielectric continuum and the Green function method,
studied in this work is the influence of electron-phonon interaction on position of the
bottom of the ground energy band for electron in the quantum well of a finite depth.
Considering the example of a plain nano-heterostructure with a quantum well based on
the double heterojunction AlxGa₁₋xAs/GaAs (nanofilm), the authors have calculated the
electron energy for a varied thickness of the film. It has been studied the influence of
barrier material composition as well as electron-phonon interaction on the electron
energy
|
| first_indexed | 2025-12-07T17:27:21Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118365 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:27:21Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kondryuk, D.V. Kramar, V.M. Kroitor, O.P. 2017-05-30T05:58:06Z 2017-05-30T05:58:06Z 2014 Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms / D.V. Kondryuk, V.M. Kramar, O.P. Kroitor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 160-164. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 63.20.Kr, 79.60 Jv https://nasplib.isofts.kiev.ua/handle/123456789/118365 Using approximation of dielectric continuum and the Green function method,
 studied in this work is the influence of electron-phonon interaction on position of the
 bottom of the ground energy band for electron in the quantum well of a finite depth.
 Considering the example of a plain nano-heterostructure with a quantum well based on
 the double heterojunction AlxGa₁₋xAs/GaAs (nanofilm), the authors have calculated the
 electron energy for a varied thickness of the film. It has been studied the influence of
 barrier material composition as well as electron-phonon interaction on the electron
 energy en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms Article published earlier |
| spellingShingle | Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms Kondryuk, D.V. Kramar, V.M. Kroitor, O.P. |
| title | Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_full | Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_fullStr | Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_full_unstemmed | Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_short | Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_sort | concentration-size dependences for the electron energy in alxga₁₋xas/gaas/alxga₁₋xas nanofilms |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118365 |
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