Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Karachevtseva, L., Kuchmii, S., Kolyadina, O., Lytvynenko, O., Matveeva, L., Sapelnikova, O., Smirnov, O., Stroyuk, O.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118367
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov, O. Stroyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 168-173. — Бібліогр.: 11 назв. — англ.

The Si-SiO₂ interface in oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and photoconductivity. The Franz-Keldysh effect, built-in electric field and surface quantization of charge carriers in the Si-SiO₂ regio...