Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• ISSN: 1560-8034
• Hauptverfasser: Karachevtseva, L., Kuchmii, S., Kolyadina, O., Lytvynenko, O., Matveeva, L., Sapelnikova, O., Smirnov, O., Stroyuk, O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118367
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Quantum-sized effects in oxidized silicon structures
 with surface II-VI nanocrystals / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov, O. Stroyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 168-173. — Бібліогр.: 11 назв. — англ.

The Si-SiO₂ interface in oxidized macroporous silicon structures with surface
 CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and
 photoconductivity. The Franz-Keldysh effect, built-in electric field and surface
 quantization of charge carriers in the Si-SiO₂ region were revealed. The splitting of
 photoconductivity peaks was detected in the area of indirect band-to-band transition due
 to quantization of charge carriers in the surface silicon region, too. The latter data
 correlate with the results of the electroreflectance spectra measurements in the area of
 direct interband transition of oxidized macroporous silicon structures with surface CdS
 and ZnO nanocrystals.