Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals
The Si-SiO₂ interface in oxidized macroporous silicon structures with surface
 CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and
 photoconductivity. The Franz-Keldysh effect, built-in electric field and surface
 quantization of charge carri...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118367 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Quantum-sized effects in oxidized silicon structures
 with surface II-VI nanocrystals / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov, O. Stroyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 168-173. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862737815057465344 |
|---|---|
| author | Karachevtseva, L. Kuchmii, S. Kolyadina, O. Lytvynenko, O. Matveeva, L. Sapelnikova, O. Smirnov, O. Stroyuk, O. |
| author_facet | Karachevtseva, L. Kuchmii, S. Kolyadina, O. Lytvynenko, O. Matveeva, L. Sapelnikova, O. Smirnov, O. Stroyuk, O. |
| citation_txt | Quantum-sized effects in oxidized silicon structures
 with surface II-VI nanocrystals / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov, O. Stroyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 168-173. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The Si-SiO₂ interface in oxidized macroporous silicon structures with surface
CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and
photoconductivity. The Franz-Keldysh effect, built-in electric field and surface
quantization of charge carriers in the Si-SiO₂ region were revealed. The splitting of
photoconductivity peaks was detected in the area of indirect band-to-band transition due
to quantization of charge carriers in the surface silicon region, too. The latter data
correlate with the results of the electroreflectance spectra measurements in the area of
direct interband transition of oxidized macroporous silicon structures with surface CdS
and ZnO nanocrystals.
|
| first_indexed | 2025-12-07T20:01:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118367 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:01:24Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Karachevtseva, L. Kuchmii, S. Kolyadina, O. Lytvynenko, O. Matveeva, L. Sapelnikova, O. Smirnov, O. Stroyuk, O. 2017-05-30T05:59:59Z 2017-05-30T05:59:59Z 2014 Quantum-sized effects in oxidized silicon structures
 with surface II-VI nanocrystals / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov, O. Stroyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 168-173. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 71.70.Ej, 78.20.Jq https://nasplib.isofts.kiev.ua/handle/123456789/118367 The Si-SiO₂ interface in oxidized macroporous silicon structures with surface
 CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and
 photoconductivity. The Franz-Keldysh effect, built-in electric field and surface
 quantization of charge carriers in the Si-SiO₂ region were revealed. The splitting of
 photoconductivity peaks was detected in the area of indirect band-to-band transition due
 to quantization of charge carriers in the surface silicon region, too. The latter data
 correlate with the results of the electroreflectance spectra measurements in the area of
 direct interband transition of oxidized macroporous silicon structures with surface CdS
 and ZnO nanocrystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals Article published earlier |
| spellingShingle | Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals Karachevtseva, L. Kuchmii, S. Kolyadina, O. Lytvynenko, O. Matveeva, L. Sapelnikova, O. Smirnov, O. Stroyuk, O. |
| title | Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_full | Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_fullStr | Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_full_unstemmed | Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_short | Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_sort | quantum-sized effects in oxidized silicon structures with surface ii-vi nanocrystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118367 |
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