Sponge-like nanostructured silicon for integrated emitters

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Hubarevich, A., Jaguiro, P., Mukha, Y., Smirnov, A., Solovjov, Ya.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118408
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Sponge-like nanostructured silicon for integrated emitters / A. Hubarevich, P. Jaguiro, Y. Mukha, A. Smirnov, Ya. Solovjov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 294-297. — Бібліогр.: 14 назв. — англ.

A new approach to nanoporous silicon formation is proposed. Anomalies both in low current densities and low fluorine ion concentrations, which is lead to low uniformity of formed porous silicon, are under consideration. It is shown that at very low current densities and fluorine ion concentration...