Sponge-like nanostructured silicon for integrated emitters
A new approach to nanoporous silicon formation is proposed. Anomalies both in low current densities and low fluorine ion concentrations, which is lead to low uniformity of formed porous silicon, are under consideration. It is shown that at very low current densities and fluorine ion concentration...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2010 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118408 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Sponge-like nanostructured silicon for integrated emitters / A. Hubarevich, P. Jaguiro, Y. Mukha, A. Smirnov, Ya. Solovjov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 294-297. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | A new approach to nanoporous silicon formation is proposed. Anomalies both
in low current densities and low fluorine ion concentrations, which is lead to low
uniformity of formed porous silicon, are under consideration. It is shown that at very low
current densities and fluorine ion concentration high uniformity, high porosity
nanoporous silicon layers can be created. Structural, electrical and optical properties of
porous silicon formed in a wide range of current densities, doping levels of silicon
substrates and fluorine concentrations are presented.
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| ISSN: | 1560-8034 |