Sponge-like nanostructured silicon for integrated emitters
A new approach to nanoporous silicon formation is proposed. Anomalies both
 in low current densities and low fluorine ion concentrations, which is lead to low
 uniformity of formed porous silicon, are under consideration. It is shown that at very low
 current densities and fl...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118408 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Sponge-like nanostructured silicon for integrated emitters / A. Hubarevich, P. Jaguiro, Y. Mukha, A. Smirnov, Ya. Solovjov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 294-297. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862589144569479168 |
|---|---|
| author | Hubarevich, A. Jaguiro, P. Mukha, Y. Smirnov, A. Solovjov, Ya. |
| author_facet | Hubarevich, A. Jaguiro, P. Mukha, Y. Smirnov, A. Solovjov, Ya. |
| citation_txt | Sponge-like nanostructured silicon for integrated emitters / A. Hubarevich, P. Jaguiro, Y. Mukha, A. Smirnov, Ya. Solovjov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 294-297. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A new approach to nanoporous silicon formation is proposed. Anomalies both
in low current densities and low fluorine ion concentrations, which is lead to low
uniformity of formed porous silicon, are under consideration. It is shown that at very low
current densities and fluorine ion concentration high uniformity, high porosity
nanoporous silicon layers can be created. Structural, electrical and optical properties of
porous silicon formed in a wide range of current densities, doping levels of silicon
substrates and fluorine concentrations are presented.
|
| first_indexed | 2025-11-27T02:19:21Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118408 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T02:19:21Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Hubarevich, A. Jaguiro, P. Mukha, Y. Smirnov, A. Solovjov, Ya. 2017-05-30T07:05:24Z 2017-05-30T07:05:24Z 2010 Sponge-like nanostructured silicon for integrated emitters / A. Hubarevich, P. Jaguiro, Y. Mukha, A. Smirnov, Ya. Solovjov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 294-297. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 78.60.Fi, 81.05.Rm, 81.07.-b https://nasplib.isofts.kiev.ua/handle/123456789/118408 A new approach to nanoporous silicon formation is proposed. Anomalies both
 in low current densities and low fluorine ion concentrations, which is lead to low
 uniformity of formed porous silicon, are under consideration. It is shown that at very low
 current densities and fluorine ion concentration high uniformity, high porosity
 nanoporous silicon layers can be created. Structural, electrical and optical properties of
 porous silicon formed in a wide range of current densities, doping levels of silicon
 substrates and fluorine concentrations are presented. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Sponge-like nanostructured silicon for integrated emitters Article published earlier |
| spellingShingle | Sponge-like nanostructured silicon for integrated emitters Hubarevich, A. Jaguiro, P. Mukha, Y. Smirnov, A. Solovjov, Ya. |
| title | Sponge-like nanostructured silicon for integrated emitters |
| title_full | Sponge-like nanostructured silicon for integrated emitters |
| title_fullStr | Sponge-like nanostructured silicon for integrated emitters |
| title_full_unstemmed | Sponge-like nanostructured silicon for integrated emitters |
| title_short | Sponge-like nanostructured silicon for integrated emitters |
| title_sort | sponge-like nanostructured silicon for integrated emitters |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118408 |
| work_keys_str_mv | AT hubarevicha spongelikenanostructuredsiliconforintegratedemitters AT jaguirop spongelikenanostructuredsiliconforintegratedemitters AT mukhay spongelikenanostructuredsiliconforintegratedemitters AT smirnova spongelikenanostructuredsiliconforintegratedemitters AT solovjovya spongelikenanostructuredsiliconforintegratedemitters |