Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface
Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge
 nanoislands grown on Si(100) surface were investigated using photocurrent
 spectroscopy. The mechanism of photoconductivity was discussed. It was shown that
 electron transitions from the ground st...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2014 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118412 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoconductivity mechanism in structures
 with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge
nanoislands grown on Si(100) surface were investigated using photocurrent
spectroscopy. The mechanism of photoconductivity was discussed. It was shown that
electron transitions from the ground state of the valence band in a quantum dot to the
conduction band of Si surrounding make the main contribution into monopolar
photoconductivity below the fundamental absorption edge of crystalline Si. Photoexcited
holes were found to be localized in Ge nanoislands inducing the lateral conductivity
changes in the near-surface depletion layer of p-Si substrate due to the field-effect.
|
|---|---|
| ISSN: | 1560-8034 |