Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface

Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge
 nanoislands grown on Si(100) surface were investigated using photocurrent
 spectroscopy. The mechanism of photoconductivity was discussed. It was shown that
 electron transitions from the ground st...

Повний опис

Збережено в:
Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2014
Автори: Melnichuk, Ye.Ye., Hyrka, Yu.V., Kondratenko, S.V., Kozyrev, Yu.N., Lysenko, V.S.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118412
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photoconductivity mechanism in structures
 with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge
 nanoislands grown on Si(100) surface were investigated using photocurrent
 spectroscopy. The mechanism of photoconductivity was discussed. It was shown that
 electron transitions from the ground state of the valence band in a quantum dot to the
 conduction band of Si surrounding make the main contribution into monopolar
 photoconductivity below the fundamental absorption edge of crystalline Si. Photoexcited
 holes were found to be localized in Ge nanoislands inducing the lateral conductivity
 changes in the near-surface depletion layer of p-Si substrate due to the field-effect.
ISSN:1560-8034