Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface
Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge nanoislands grown on Si(100) surface were investigated using photocurrent spectroscopy. The mechanism of photoconductivity was discussed. It was shown that electron transitions from the ground state of the valence band...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2014 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118412 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ. |
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Melnichuk, Ye.Ye. Hyrka, Yu.V. Kondratenko, S.V. Kozyrev, Yu.N. Lysenko, V.S. 2017-05-30T10:14:04Z 2017-05-30T10:14:04Z 2014 Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 72.40.+w, 73.63.Kv, 78.67.Bf https://nasplib.isofts.kiev.ua/handle/123456789/118412 Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge nanoislands grown on Si(100) surface were investigated using photocurrent spectroscopy. The mechanism of photoconductivity was discussed. It was shown that electron transitions from the ground state of the valence band in a quantum dot to the conduction band of Si surrounding make the main contribution into monopolar photoconductivity below the fundamental absorption edge of crystalline Si. Photoexcited holes were found to be localized in Ge nanoislands inducing the lateral conductivity changes in the near-surface depletion layer of p-Si substrate due to the field-effect. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| spellingShingle |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface Melnichuk, Ye.Ye. Hyrka, Yu.V. Kondratenko, S.V. Kozyrev, Yu.N. Lysenko, V.S. |
| title_short |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| title_full |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| title_fullStr |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| title_full_unstemmed |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| title_sort |
photoconductivity mechanism in structures with ge-nanoclusters grown on si(100) surface |
| author |
Melnichuk, Ye.Ye. Hyrka, Yu.V. Kondratenko, S.V. Kozyrev, Yu.N. Lysenko, V.S. |
| author_facet |
Melnichuk, Ye.Ye. Hyrka, Yu.V. Kondratenko, S.V. Kozyrev, Yu.N. Lysenko, V.S. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge
nanoislands grown on Si(100) surface were investigated using photocurrent
spectroscopy. The mechanism of photoconductivity was discussed. It was shown that
electron transitions from the ground state of the valence band in a quantum dot to the
conduction band of Si surrounding make the main contribution into monopolar
photoconductivity below the fundamental absorption edge of crystalline Si. Photoexcited
holes were found to be localized in Ge nanoislands inducing the lateral conductivity
changes in the near-surface depletion layer of p-Si substrate due to the field-effect.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118412 |
| citation_txt |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ. |
| work_keys_str_mv |
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| first_indexed |
2025-12-07T20:26:08Z |
| last_indexed |
2025-12-07T20:26:08Z |
| _version_ |
1850882568892710912 |