Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Melnichuk, Ye.Ye., Hyrka, Yu.V., Kondratenko, S.V., Kozyrev, Yu.N., Lysenko, V.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118412
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Photoconductivity mechanism in structures
 with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ.

Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge
 nanoislands grown on Si(100) surface were investigated using photocurrent
 spectroscopy. The mechanism of photoconductivity was discussed. It was shown that
 electron transitions from the ground st...