Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118413
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures / K.V. Michailovska, I.Z. Indutnyi, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 336-340. — Бібліогр.: 24 назв. — англ.

The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL b...