High-speed optical recording in vitreous chalcogenide thin films
Thin films of glassy chalcogenide semiconductor are widely used as recording
 media in optical data storage. To obtain relief micro- and nanoscale structures on the
 surface of optical master discs inorganic photoresists based on chalcogenide glassy
 semiconductors can be use...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118425 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | High-speed optical recording in vitreous chalcogenide thin films / A.A. Kryuchyn, V.V. Petrov, V.M. Rubish, A.S. Lapchuk, S.O. Kostyukevych, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 389-393. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862680126088544256 |
|---|---|
| author | Kryuchyn, A.A. Petrov, V.V. Rubish, V.M. Lapchuk, A.S. Kostyukevych, S.O. Shepeliavyi, P.E. Kostyukevych, K.V. |
| author_facet | Kryuchyn, A.A. Petrov, V.V. Rubish, V.M. Lapchuk, A.S. Kostyukevych, S.O. Shepeliavyi, P.E. Kostyukevych, K.V. |
| citation_txt | High-speed optical recording in vitreous chalcogenide thin films / A.A. Kryuchyn, V.V. Petrov, V.M. Rubish, A.S. Lapchuk, S.O. Kostyukevych, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 389-393. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Thin films of glassy chalcogenide semiconductor are widely used as recording
media in optical data storage. To obtain relief micro- and nanoscale structures on the
surface of optical master discs inorganic photoresists based on chalcogenide glassy
semiconductors can be used. They have high resolution and allow for exposure by short
laser pulses. Implementation of such exposure is promoted by increasing the speed of
photostructural transformations at high powers of exposing radiation. This increase in the
sensitivity is associated with both local heating by illumination and a high density of
excited electron-hole pairs. The exposure mode of the inorganic photoresists based on
glassy chalcogenide semiconductor pulses of 10⁻⁸-10⁻⁹ s is close to the threshold of local
photothermal destruction. Significant impact on the value of the threshold of
photothermal destruction effects the choice of the substrate material which determines
the rate of heat removal from the irradiation area. Moreover, one also needs to consider
the effect of pulsed annealing of the inorganic photoresist material on the process of
selective etching. We have established an inversion of the selective etching of the
inorganic negative photoresist based on As₂S₃ in the center of the irradiated zone. The
diameter of this zone is about 20% of the diameter of exposing beam.
After the selective etching in alkaline solution in the center of protrusions being
formed on the substrate, there observed are some dimples with the depth of 30-50 nm.
Prior to the processing of irradiated inorganic photoresist by the selective etching these
dimples were absent and their appearance is not due to possible local material
evaporation of the inorganic photoresist. A possible reason for the inversion of solubility
of the inorganic photoresist could be pulsed annealing in the recording process.
|
| first_indexed | 2025-12-07T15:45:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118425 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:45:26Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kryuchyn, A.A. Petrov, V.V. Rubish, V.M. Lapchuk, A.S. Kostyukevych, S.O. Shepeliavyi, P.E. Kostyukevych, K.V. 2017-05-30T10:31:27Z 2017-05-30T10:31:27Z 2014 High-speed optical recording in vitreous chalcogenide thin films / A.A. Kryuchyn, V.V. Petrov, V.M. Rubish, A.S. Lapchuk, S.O. Kostyukevych, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 389-393. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 42.70.Ln, 85.40.Hp https://nasplib.isofts.kiev.ua/handle/123456789/118425 Thin films of glassy chalcogenide semiconductor are widely used as recording
 media in optical data storage. To obtain relief micro- and nanoscale structures on the
 surface of optical master discs inorganic photoresists based on chalcogenide glassy
 semiconductors can be used. They have high resolution and allow for exposure by short
 laser pulses. Implementation of such exposure is promoted by increasing the speed of
 photostructural transformations at high powers of exposing radiation. This increase in the
 sensitivity is associated with both local heating by illumination and a high density of
 excited electron-hole pairs. The exposure mode of the inorganic photoresists based on
 glassy chalcogenide semiconductor pulses of 10⁻⁸-10⁻⁹ s is close to the threshold of local
 photothermal destruction. Significant impact on the value of the threshold of
 photothermal destruction effects the choice of the substrate material which determines
 the rate of heat removal from the irradiation area. Moreover, one also needs to consider
 the effect of pulsed annealing of the inorganic photoresist material on the process of
 selective etching. We have established an inversion of the selective etching of the
 inorganic negative photoresist based on As₂S₃ in the center of the irradiated zone. The
 diameter of this zone is about 20% of the diameter of exposing beam.
 After the selective etching in alkaline solution in the center of protrusions being
 formed on the substrate, there observed are some dimples with the depth of 30-50 nm.
 Prior to the processing of irradiated inorganic photoresist by the selective etching these
 dimples were absent and their appearance is not due to possible local material
 evaporation of the inorganic photoresist. A possible reason for the inversion of solubility
 of the inorganic photoresist could be pulsed annealing in the recording process. The authors would like to express their sincere gratitude
 to Yu.A. Borodin, scientific researcher of the Institute
 for Information Recording, NAS of Ukraine, for
 recording information on master discs; V.I. Min’ko,
 senior scientific researcher of the Institute of
 Semiconductor Physics, NAS of Ukraine, for vacuum
 deposition of the registering media; and
 A.A. Kudryavtsev, senior scientific researcher of the
 Institute of Semiconductor Physics, NAS of Ukraine, for
 taking part in discussion of paper materials and editing
 it. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics High-speed optical recording in vitreous chalcogenide thin films Article published earlier |
| spellingShingle | High-speed optical recording in vitreous chalcogenide thin films Kryuchyn, A.A. Petrov, V.V. Rubish, V.M. Lapchuk, A.S. Kostyukevych, S.O. Shepeliavyi, P.E. Kostyukevych, K.V. |
| title | High-speed optical recording in vitreous chalcogenide thin films |
| title_full | High-speed optical recording in vitreous chalcogenide thin films |
| title_fullStr | High-speed optical recording in vitreous chalcogenide thin films |
| title_full_unstemmed | High-speed optical recording in vitreous chalcogenide thin films |
| title_short | High-speed optical recording in vitreous chalcogenide thin films |
| title_sort | high-speed optical recording in vitreous chalcogenide thin films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118425 |
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