Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Shpotyuk, O.I., Vakiv, M.M., Shpotyuk, M.V., Ingram, A., Filipecki, J., Vaskiv, A.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118489
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description / O.I. Shpotyuk, M.M. Vakiv, M.V. Shpotyuk, A. Ingram, J. Filipecki, A.P. Vaskiv // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 243-251. — Бібліогр.: 46 назв. — англ.

A newly modified correlation equation between defect-related positron lifetime t₂ (ns) defined within two-state model and corresponding radius R (Å) of freevolume positron traps in the full non-linear form or simplified linear-approximated is proved to account for compositional trends in void volume evolution of chalcogenide semiconductor compounds like binary As-S(Se) glasses. Specific chemical environment of free-volume voids associated with neighbouring network-forming polyhedrons is shown to play a decisive role in this correlation, leading to systematically enhanced estimated void sizes in comparison with typical molecular substrates, such as polymers.