Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description
A newly modified correlation equation between defect-related positron lifetime t₂ (ns) defined within two-state model and corresponding radius R (Å) of freevolume positron traps in the full non-linear form or simplified linear-approximated is proved to account for compositional trends in void volume...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118489 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Free-volume correlations in positron-sensitive annihilation modes
 in chalcogenide vitreous semiconductors:
 on the path from illusions towards realistic physical description / O.I. Shpotyuk, M.M. Vakiv, M.V. Shpotyuk, A. Ingram, J. Filipecki, A.P. Vaskiv // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 243-251. — Бібліогр.: 46 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862683014832586752 |
|---|---|
| author | Shpotyuk, O.I. Vakiv, M.M. Shpotyuk, M.V. Ingram, A. Filipecki, J. Vaskiv, A.P. |
| author_facet | Shpotyuk, O.I. Vakiv, M.M. Shpotyuk, M.V. Ingram, A. Filipecki, J. Vaskiv, A.P. |
| citation_txt | Free-volume correlations in positron-sensitive annihilation modes
 in chalcogenide vitreous semiconductors:
 on the path from illusions towards realistic physical description / O.I. Shpotyuk, M.M. Vakiv, M.V. Shpotyuk, A. Ingram, J. Filipecki, A.P. Vaskiv // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 243-251. — Бібліогр.: 46 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A newly modified correlation equation between defect-related positron lifetime t₂ (ns) defined within two-state model and corresponding radius R (Å) of freevolume positron traps in the full non-linear form or simplified linear-approximated is proved to account for compositional trends in void volume evolution of chalcogenide semiconductor compounds like binary As-S(Se) glasses. Specific chemical environment of free-volume voids associated with neighbouring network-forming polyhedrons is shown to play a decisive role in this correlation, leading to systematically enhanced estimated void sizes in comparison with typical molecular substrates, such as polymers.
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| first_indexed | 2025-12-07T15:54:49Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118489 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:54:49Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Shpotyuk, O.I. Vakiv, M.M. Shpotyuk, M.V. Ingram, A. Filipecki, J. Vaskiv, A.P. 2017-05-30T14:09:43Z 2017-05-30T14:09:43Z 2014 Free-volume correlations in positron-sensitive annihilation modes
 in chalcogenide vitreous semiconductors:
 on the path from illusions towards realistic physical description / O.I. Shpotyuk, M.M. Vakiv, M.V. Shpotyuk, A. Ingram, J. Filipecki, A.P. Vaskiv // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 243-251. — Бібліогр.: 46 назв. — англ. 1560-8034 PACS 61.43.Fs, 62.20.mt, 62.20.Qp, 64.70.pe, 64.70.ph https://nasplib.isofts.kiev.ua/handle/123456789/118489 A newly modified correlation equation between defect-related positron lifetime t₂ (ns) defined within two-state model and corresponding radius R (Å) of freevolume positron traps in the full non-linear form or simplified linear-approximated is proved to account for compositional trends in void volume evolution of chalcogenide semiconductor compounds like binary As-S(Se) glasses. Specific chemical environment of free-volume voids associated with neighbouring network-forming polyhedrons is shown to play a decisive role in this correlation, leading to systematically enhanced estimated void sizes in comparison with typical molecular substrates, such as polymers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description Article published earlier |
| spellingShingle | Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description Shpotyuk, O.I. Vakiv, M.M. Shpotyuk, M.V. Ingram, A. Filipecki, J. Vaskiv, A.P. |
| title | Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description |
| title_full | Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description |
| title_fullStr | Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description |
| title_full_unstemmed | Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description |
| title_short | Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description |
| title_sort | free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118489 |
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