Heterostructure ohmic contacts to p-CdTe polycrystalline films

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2014
• Автори: Sukach, A.V., Tetyorkin, V.V., Tkachuk, A.I.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118495
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Heterostructure ohmic contacts to p-CdTe polycrystalline films / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 268-271. — Бібліогр.: 21 назв. — англ.

Heterostructure contacts p⁺
 -PbTe/p-CdTe were prepared using the hot-wall
 technique on glassceramic substrates. It has been shown that the potential barrier at the
 p⁺
 -PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That
 allows one to create ohmic heterocontacts of metal-p⁺
 -PbTe/p-CdTe type. The transverse
 and in-plane transport of carriers has been investigated as a function of bias voltage and
 temperature. The current-voltage characteristics measured for the transverse arrangement
 of contacts exhibited ohmic behavior. The current-voltage characteristics of these
 contacts are determined by unipolar injection of holes from p⁺
 -PbTe into p-CdTe. The inplane
 transport has been explained by presence of potential barriers at the grain
 boundaries. The potential barrier height has been estimated to be ~0.1 eV at room
 temperature. The mechanism of carrier transport is thermionic emission.