Heterostructure ohmic contacts to p-CdTe polycrystalline films
Heterostructure contacts p⁺
 -PbTe/p-CdTe were prepared using the hot-wall
 technique on glassceramic substrates. It has been shown that the potential barrier at the
 p⁺
 -PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That
 a...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118495 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Heterostructure ohmic contacts to p-CdTe polycrystalline films / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 268-271. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862694230062792704 |
|---|---|
| author | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| author_facet | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| citation_txt | Heterostructure ohmic contacts to p-CdTe polycrystalline films / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 268-271. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Heterostructure contacts p⁺
-PbTe/p-CdTe were prepared using the hot-wall
technique on glassceramic substrates. It has been shown that the potential barrier at the
p⁺
-PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That
allows one to create ohmic heterocontacts of metal-p⁺
-PbTe/p-CdTe type. The transverse
and in-plane transport of carriers has been investigated as a function of bias voltage and
temperature. The current-voltage characteristics measured for the transverse arrangement
of contacts exhibited ohmic behavior. The current-voltage characteristics of these
contacts are determined by unipolar injection of holes from p⁺
-PbTe into p-CdTe. The inplane
transport has been explained by presence of potential barriers at the grain
boundaries. The potential barrier height has been estimated to be ~0.1 eV at room
temperature. The mechanism of carrier transport is thermionic emission.
|
| first_indexed | 2025-12-07T16:21:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118495 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:21:46Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. 2017-05-30T14:14:31Z 2017-05-30T14:14:31Z 2014 Heterostructure ohmic contacts to p-CdTe polycrystalline films / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 268-271. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 78.30.Fs, 73.40.-c, 73.61.Ga https://nasplib.isofts.kiev.ua/handle/123456789/118495 Heterostructure contacts p⁺
 -PbTe/p-CdTe were prepared using the hot-wall
 technique on glassceramic substrates. It has been shown that the potential barrier at the
 p⁺
 -PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That
 allows one to create ohmic heterocontacts of metal-p⁺
 -PbTe/p-CdTe type. The transverse
 and in-plane transport of carriers has been investigated as a function of bias voltage and
 temperature. The current-voltage characteristics measured for the transverse arrangement
 of contacts exhibited ohmic behavior. The current-voltage characteristics of these
 contacts are determined by unipolar injection of holes from p⁺
 -PbTe into p-CdTe. The inplane
 transport has been explained by presence of potential barriers at the grain
 boundaries. The potential barrier height has been estimated to be ~0.1 eV at room
 temperature. The mechanism of carrier transport is thermionic emission. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Heterostructure ohmic contacts to p-CdTe polycrystalline films Article published earlier |
| spellingShingle | Heterostructure ohmic contacts to p-CdTe polycrystalline films Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| title | Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_full | Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_fullStr | Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_full_unstemmed | Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_short | Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_sort | heterostructure ohmic contacts to p-cdte polycrystalline films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118495 |
| work_keys_str_mv | AT sukachav heterostructureohmiccontactstopcdtepolycrystallinefilms AT tetyorkinvv heterostructureohmiccontactstopcdtepolycrystallinefilms AT tkachukai heterostructureohmiccontactstopcdtepolycrystallinefilms |