The growth of weakly coupled graphene sheets from silicon carbide powder
A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly coupled graphene layers in large-scale production. The study of the obtained ca...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118507 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The growth of weakly coupled graphene sheets from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. |