The growth of weakly coupled graphene sheets from silicon carbide powder

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2014
• Автори: Kiselov, V.S., Lytvyn, P.M., Nikolenko, A.S., Strelchuk, V.V., Stubrov, Yu.Yu., Tryus, M., Belyaev, A.E.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118507
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: The growth of weakly coupled graphene sheets
 from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ.

A simple method for production of weakly coupled graphene layers by hightemperature
 sublimation of polycrystalline SiC is presented. The method allows
 manufacturing carbon-based composite with a high content of weakly coupled graphene
 layers in large-scale production. The study of the obtained carbon-based material by
 means of scanning electron microscopy, Raman spectroscopy and atomic force
 microscopy detected graphene plates with lateral size of up to tens of micrometers. The
 obtained graphene sheets are shown to have very high crystal perfection, low
 concentration of defects and weak interlayer coupling, which depends on the growth
 conditions. The proposed method of producing graphene-based composites is supposed
 to be very promising due to its relative simplicity and high output.