The growth of weakly coupled graphene sheets from silicon carbide powder
A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly coupled graphene layers in large-scale production. The study of the obtained ca...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , , , , , |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118507 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The growth of weakly coupled graphene sheets from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. 2017-05-30T14:23:32Z 2017-05-30T14:23:32Z 2014 The growth of weakly coupled graphene sheets from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. 1560-8034 PACS 61.48.Gh, 68.37.Ps, 68.65.Pq, 78.30.-j, 78.67.Wj, 81.05.ue https://nasplib.isofts.kiev.ua/handle/123456789/118507 A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly coupled graphene layers in large-scale production. The study of the obtained carbon-based material by means of scanning electron microscopy, Raman spectroscopy and atomic force microscopy detected graphene plates with lateral size of up to tens of micrometers. The obtained graphene sheets are shown to have very high crystal perfection, low concentration of defects and weak interlayer coupling, which depends on the growth conditions. The proposed method of producing graphene-based composites is supposed to be very promising due to its relative simplicity and high output. The work was supported in part by the Science and Technology Center in Ukraine (STCU) and National Academy of Sciences of Ukraine within the framework of the Targeted Research & Development Initiatives (TRDI) Program under the Grant Project #5716 “Development of Graphene Technologies and Investigation of Graphene-based Nanostructures for Nanoelectronics and Optoelectronics” (2012-2014). Partial support by FP7-PEOPLE-2010-IRSES and Alexander von Humboldt Institutional Partnership project (DEU/1053880) are acknowledged. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The growth of weakly coupled graphene sheets from silicon carbide powder Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| spellingShingle |
The growth of weakly coupled graphene sheets from silicon carbide powder Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. |
| title_short |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_full |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_fullStr |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_full_unstemmed |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_sort |
growth of weakly coupled graphene sheets from silicon carbide powder |
| author |
Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. |
| author_facet |
Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A simple method for production of weakly coupled graphene layers by hightemperature
sublimation of polycrystalline SiC is presented. The method allows
manufacturing carbon-based composite with a high content of weakly coupled graphene
layers in large-scale production. The study of the obtained carbon-based material by
means of scanning electron microscopy, Raman spectroscopy and atomic force
microscopy detected graphene plates with lateral size of up to tens of micrometers. The
obtained graphene sheets are shown to have very high crystal perfection, low
concentration of defects and weak interlayer coupling, which depends on the growth
conditions. The proposed method of producing graphene-based composites is supposed
to be very promising due to its relative simplicity and high output.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118507 |
| citation_txt |
The growth of weakly coupled graphene sheets from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. |
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2025-12-07T15:53:04Z |
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2025-12-07T15:53:04Z |
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