The growth of weakly coupled graphene sheets from silicon carbide powder
A simple method for production of weakly coupled graphene layers by hightemperature
 sublimation of polycrystalline SiC is presented. The method allows
 manufacturing carbon-based composite with a high content of weakly coupled graphene
 layers in large-scale production. The...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118507 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The growth of weakly coupled graphene sheets
 from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862682445593182208 |
|---|---|
| author | Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. |
| author_facet | Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. |
| citation_txt | The growth of weakly coupled graphene sheets
 from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A simple method for production of weakly coupled graphene layers by hightemperature
sublimation of polycrystalline SiC is presented. The method allows
manufacturing carbon-based composite with a high content of weakly coupled graphene
layers in large-scale production. The study of the obtained carbon-based material by
means of scanning electron microscopy, Raman spectroscopy and atomic force
microscopy detected graphene plates with lateral size of up to tens of micrometers. The
obtained graphene sheets are shown to have very high crystal perfection, low
concentration of defects and weak interlayer coupling, which depends on the growth
conditions. The proposed method of producing graphene-based composites is supposed
to be very promising due to its relative simplicity and high output.
|
| first_indexed | 2025-12-07T15:53:04Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118507 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:53:04Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. 2017-05-30T14:23:32Z 2017-05-30T14:23:32Z 2014 The growth of weakly coupled graphene sheets
 from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. 1560-8034 PACS 61.48.Gh, 68.37.Ps, 68.65.Pq, 78.30.-j, 78.67.Wj, 81.05.ue https://nasplib.isofts.kiev.ua/handle/123456789/118507 A simple method for production of weakly coupled graphene layers by hightemperature
 sublimation of polycrystalline SiC is presented. The method allows
 manufacturing carbon-based composite with a high content of weakly coupled graphene
 layers in large-scale production. The study of the obtained carbon-based material by
 means of scanning electron microscopy, Raman spectroscopy and atomic force
 microscopy detected graphene plates with lateral size of up to tens of micrometers. The
 obtained graphene sheets are shown to have very high crystal perfection, low
 concentration of defects and weak interlayer coupling, which depends on the growth
 conditions. The proposed method of producing graphene-based composites is supposed
 to be very promising due to its relative simplicity and high output. The work was supported in part by the Science and
 Technology Center in Ukraine (STCU) and National
 Academy of Sciences of Ukraine within the framework
 of the Targeted Research & Development Initiatives
 (TRDI) Program under the Grant Project #5716
 “Development of Graphene Technologies and
 Investigation of Graphene-based Nanostructures for
 Nanoelectronics and Optoelectronics” (2012-2014).
 Partial support by FP7-PEOPLE-2010-IRSES and
 Alexander von Humboldt Institutional Partnership
 project (DEU/1053880) are acknowledged. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The growth of weakly coupled graphene sheets from silicon carbide powder Article published earlier |
| spellingShingle | The growth of weakly coupled graphene sheets from silicon carbide powder Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. |
| title | The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_full | The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_fullStr | The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_full_unstemmed | The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_short | The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_sort | growth of weakly coupled graphene sheets from silicon carbide powder |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118507 |
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