The growth of weakly coupled graphene sheets from silicon carbide powder

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Kiselov, V.S., Lytvyn, P.M., Nikolenko, A.S., Strelchuk, V.V., Stubrov, Yu.Yu., Tryus, M., Belyaev, A.E.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118507
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The growth of weakly coupled graphene sheets from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ.

A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly coupled graphene layers in large-scale production. The study of the obtained ca...