Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity

• Дата: 2010
• Автори: Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118559
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity / M.S. Boltovets, V.M. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.V. Shynkarenko, V.M. Sheremet, Yu.N. Sveshnikov, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 337-342. — Бібліогр.: 37 назв. — англ.

We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with circular contact geometry. The Ti−Al−TiBx−Au contact metallization to n-GaN retains its layer structure after thermal annealing at temperatures up to 900 °C. The contact resistivity ρс is (6.69±1.67)×10⁻⁵ Ω⋅cm². For the Au−TiBx−Ni−p-GaN contact structure, the contact resistivity is (1±0.15)×10⁻³ Ω⋅cm² .