Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118559
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Formation of ohmic contacts to n(p)-gan and measurement
 of their contact resistivity / M.S. Boltovets, V.M. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.V. Shynkarenko, V.M. Sheremet, Yu.N. Sveshnikov, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 337-342. — Бібліогр.: 37 назв. — англ.

We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium
 boride as diffusion barrier. It is shown that the optimal method of contact resistivity
 measurement is the transmission line method (TLM) with circular contact geometry. The
 Ti−Al−TiBx−Au contact me...