Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
We studied the effect of uniform compression on characteristics of Au–n-Si
 Schottky barrier diodes made of overcompensated semiconductor. It is shown that
 overcompensation is caused by formation of structural defects owing to thermal
 treatment of the initial silicon wafers...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118563 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of pressure on the characteristics of Schottky barrier diodes
 made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. |