Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers.
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2010 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118563 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118563 |
|---|---|
| record_format |
dspace |
| spelling |
Vlasov, S.I. Saparov, F.A. Ismailov, K.A. 2017-05-30T16:16:49Z 2017-05-30T16:16:49Z 2010 Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 61.72.-y, 85.30.Hi, Kk https://nasplib.isofts.kiev.ua/handle/123456789/118563 We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| spellingShingle |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor Vlasov, S.I. Saparov, F.A. Ismailov, K.A. |
| title_short |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_full |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_fullStr |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_full_unstemmed |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_sort |
effect of pressure on the characteristics of schottky barrier diodes made of overcompensated semiconductor |
| author |
Vlasov, S.I. Saparov, F.A. Ismailov, K.A. |
| author_facet |
Vlasov, S.I. Saparov, F.A. Ismailov, K.A. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We studied the effect of uniform compression on characteristics of Au–n-Si
Schottky barrier diodes made of overcompensated semiconductor. It is shown that
overcompensation is caused by formation of structural defects owing to thermal
treatment of the initial silicon wafers.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118563 |
| citation_txt |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. |
| work_keys_str_mv |
AT vlasovsi effectofpressureonthecharacteristicsofschottkybarrierdiodesmadeofovercompensatedsemiconductor AT saparovfa effectofpressureonthecharacteristicsofschottkybarrierdiodesmadeofovercompensatedsemiconductor AT ismailovka effectofpressureonthecharacteristicsofschottkybarrierdiodesmadeofovercompensatedsemiconductor |
| first_indexed |
2025-12-07T17:56:03Z |
| last_indexed |
2025-12-07T17:56:03Z |
| _version_ |
1850873126273941504 |