Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
We studied the effect of uniform compression on characteristics of Au–n-Si
 Schottky barrier diodes made of overcompensated semiconductor. It is shown that
 overcompensation is caused by formation of structural defects owing to thermal
 treatment of the initial silicon wafers...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2010 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118563 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of pressure on the characteristics of Schottky barrier diodes
 made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862715061231943680 |
|---|---|
| author | Vlasov, S.I. Saparov, F.A. Ismailov, K.A. |
| author_facet | Vlasov, S.I. Saparov, F.A. Ismailov, K.A. |
| citation_txt | Effect of pressure on the characteristics of Schottky barrier diodes
 made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We studied the effect of uniform compression on characteristics of Au–n-Si
Schottky barrier diodes made of overcompensated semiconductor. It is shown that
overcompensation is caused by formation of structural defects owing to thermal
treatment of the initial silicon wafers.
|
| first_indexed | 2025-12-07T17:56:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118563 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:56:03Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlasov, S.I. Saparov, F.A. Ismailov, K.A. 2017-05-30T16:16:49Z 2017-05-30T16:16:49Z 2010 Effect of pressure on the characteristics of Schottky barrier diodes
 made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 61.72.-y, 85.30.Hi, Kk https://nasplib.isofts.kiev.ua/handle/123456789/118563 We studied the effect of uniform compression on characteristics of Au–n-Si
 Schottky barrier diodes made of overcompensated semiconductor. It is shown that
 overcompensation is caused by formation of structural defects owing to thermal
 treatment of the initial silicon wafers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor Article published earlier |
| spellingShingle | Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor Vlasov, S.I. Saparov, F.A. Ismailov, K.A. |
| title | Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_full | Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_fullStr | Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_full_unstemmed | Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_short | Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_sort | effect of pressure on the characteristics of schottky barrier diodes made of overcompensated semiconductor |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118563 |
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