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Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2010
Main Authors:	Vlasov, S.I., Saparov, F.A., Ismailov, K.A.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/118563
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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