Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2010
• Автори: Vlasov, S.I., Saparov, F.A., Ismailov, K.A.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118563
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ.

We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers.