Double- and triple-crystal X-ray diffractometry of microdefects in silicon

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Molodkin, V.B., Olikhovskii, S.I., Kyslovskyy, Ye.M., Len, E.G., Reshetnyk, O.V., Vladimirova, T.P., V.V. Lizunov, V.V., Lizunova, S.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118577
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Double- and triple-crystal X-ray diffractometry of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ.

The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals with defects in crystal bulk and with strained...